I D25
PolarHV TM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
V DSS = 800 V
= 16 A
R DS(on) ≤ 600 m Ω
t rr ≤ 250 ns
Avalanche Rated
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
800
V
V DGR
V GSS
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
800
± 30
V
V
G
D
S
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 40
16
40
V
A
A
TO-268 (IXFT)
I AR
E AR
T C = 25 ° C
T C = 25 ° C
8
30
A
mJ
G
S
D (TAB)
E AS
dv/dt
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
1.0
10
J
V/ns
PLUS220 (IXFV)
T J ≤ 150 ° C, R G = 5 Ω
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
460
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
G
D
S
PLUS220SMD (IXFV...S)
D (TAB)
M d
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
F C
Mounting force (PLUS220)
11..65/2.5..15
N/lb
G
Weight
TO-247
TO-268
PLUS220 & PLUS220SMD
6.0
5.0
4.0
g
g
g
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Features
Fast Recovery diode
BV DSS
V GS = 0 V, I D = 250 μ A
800
V
Unclamped Inductive Switching (UIS)
rated
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.0
± 100
25
250
V
nA
μ A
μ A
International standard packages
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
600
m Ω
Space savings
High power density
? 2006 IXYS All rights reserved
DS99599E(07/06)
相关PDF资料
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